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TG2016SMN

Epson TCXO Oscillator
Frequency Range: 10 MHz to 55MHz
External Dimensions: 2.0 x 1.6 mm
PN: X1G005441030416 X1G005441030616
Applications: GPS,RF Wireless communication devices(LTE, WiMAX, Wi-Fi, W-LAN, IoT others)
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Parameter Table
 
Item Symbol Specifications Conditions / Remarks
VC-TCXO TCXO
Output
frequency range		 f0 10 MHz to 55MHz Please contact us except for standard frequency
19.2MHz , 26MHz , 38.4MHz Standard frequency
Supply voltage VCC 1.8V ±0.1V / 2.8V ±5% / 3.0V ±5% / 3.3V ±5% Supply voltage range:1.7V to 3.63V
Storage temperature T_stg -40°C to +90°C Storage as single product.
Operating temperature T_use G: -40°C to +85°C  
Frequency tolerance f_tol ±1.5 ×10-6 Max. After reflow,+25°C
Frequency
/ temperature characteristics		 f0-TC C: ±0.5 × 10-6 Max. / G: -40°C to +85°C
F: ±2.0 × 10-6 Max. / G: -40°C to +85°C		  
Frequency
/ load coefficient		 f0-Load ±0.1 × 10-6 Max. 10kΩ // 10pF ±10%
Frequency
/ voltage coefficient		 f0-VCC ±0.1 × 10-6 Max. VCC ± 5%
Frequency aging f_age ±0.5 × 10-6 Max. +25°C,First year,
10 MHz
12 MHz ≦ f0 ≦ 20 MHz
24 MHz ≦ f0 ≦ 40 MHz
±1.5 × 10-6 Max. +25°C,First year,
10 MHz < f0 < 12 MHz
20 MHz < f0 < 24 MHz
40 MHz < f0 ≦ 55 MHz
Current
consumption		 ICC 1.5 mA Max. 10 MHz ≦ f0 ≦ 26 MHz
1.8 mA Max. 26 MHz < f0 ≦ 40 MHz
2.0 mA Max. 40 MHz < f0 ≦ 50 MHz
2.1 mA Max. 50 MHz < f0 ≦ 55 MHz
Input resistance Rin 500 kΩ Min. - VC - GND(DC)
Frequency control range f_cont ±8.0 × 10-6 to ±12 × 10-6 - B: VC =0.9V ±0.6V (VCC=1.8V)
C: VC =1.4V ±1.0V (VCC=2.8V)
D: VC =1.5V ±1.0V (VCC=3.0V)
E: VC =1.65V ±1.0V (VCC=3.3V)
Frequency change polarity - Positive polarity -  
Symmetry SYM 45% to 55% GND level(DC cut)
Output voltage VPP 0.8V Min. peak to peak
Start-up time t_str 1.0 ms Max. t=0 st 90% Vcc
Output load condition Load_R 10kΩ DC cut capacitor = 0.01µF

External Dimensions

(Unit: mm)

Please keep "N.C." pin OPEN condition or GND connection.
"N.C." pin doesn’t work as a ground pin.

Footprint (Recommended)

(Unit: mm)

To maintain stable operation, provide a 0.01uF to 0.1uF by-pass capacitor at a location as near as possible to the power source terminal of the crystal product (between Vcc - GND).